Physics
Ion Implantation
70%
Ion
66%
Atoms
57%
Silicon
54%
Arrays
52%
Ion Beams
30%
Semiconductor
29%
Variations
24%
Electrons
23%
Fabrication
21%
Performance
21%
Region
19%
Technology
19%
Semiconductor Device
18%
Silicon Transistor
18%
Detection
17%
Room Temperature
16%
Photons
16%
Impurities
15%
Emission
15%
Value
15%
Quantum Transport
15%
Etching
14%
Regimes
14%
Sides
12%
Substrates
12%
Electric Potential
10%
Utilization
8%
Radiation Effect
8%
Diamonds
8%
High Temperature
8%
Photoluminescence
8%
Monte Carlo
8%
Revisions
7%
Electrostatics
7%
Threshold Voltage
6%
Erbium
6%
Electrical Properties
6%
Color Centers
6%
Nitrogen
6%
Controllability
5%
Nanoscale
5%
Transport Properties
5%
Simulation
5%
Increasing
5%
Temperature
5%
Sites
5%
Impact
5%
Chemistry
Doping Material
65%
Silicon
65%
Atom
57%
Ion Implantation
36%
Procedure
34%
Doping
29%
Semiconductor
24%
Number
21%
Device
19%
Engineering Process
18%
Ion
18%
Ambient Reaction Temperature
17%
Electron Particle
16%
Application
14%
Quantum Transport
13%
Diamond
12%
Erbium
11%
Implanted Ion
11%
Concentration
9%
Ion Beam
8%
Color Center
8%
Probe
8%
Germanium Atom
8%
Transconductance
8%
Voltage
7%
Fluctuation
7%
Impurity
6%
Donor
6%
Photoluminescence
6%
Quantum Information
5%
Wavelength
5%
Photon Emission
5%
Reaction Temperature
5%
Dioxygen
5%
Material Science
Doping (Additives)
100%
Ion Implantation
66%
Devices
47%
Temperature
39%
Transistor
29%
Silicon
26%
Semiconductor Material
24%
Field Effect Transistors
20%
Surface
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Semiconductor Device
15%
Nanoelectronics
14%
Wet Etching
12%
Diamond
12%
Irradiation
12%
Electrical Property
10%
Density
10%
Erbium
8%
Photoluminescence
8%
Germanium
8%
Silicon on Insulator
8%
Monolayers
8%
Quantum Device
8%
Electronic Component
8%
Atom Probe
8%
Electronic Circuit
7%
Material
7%
Silicon Device
6%
Conductivity
6%
Oxide
6%
Nanocrystalline Material
6%
Impurity
5%