Engineering
Indium Gallium Arsenide
55%
Terahertz
45%
Graphene
30%
Field-Effect Transistor
30%
Gate Length
25%
Cutoff Frequency
21%
Plasmonics
17%
Photonics
17%
Two Dimensional
14%
Epitaxial Graphene
12%
Field Effect Transistors
12%
Gate Electrode
12%
Carrier Concentration
11%
Conversion Gain
11%
Material System
11%
Responsivity
11%
Source Resistance
10%
Current Drain
9%
Heterojunctions
9%
Room Temperature
9%
Heterostructures
9%
Bias Voltage
8%
Gallium Arsenide
8%
Current Injection
8%
Gate Stack
8%
Impact Ionization
7%
Si Substrate
7%
Parasitic Resistance
7%
Carrier Frequency
7%
Mixers (Machinery)
6%
Silicon Substrate
6%
Channel Transistor
6%
Drain Bias
6%
Current Gain
6%
Delay Time
6%
Subcarrier
5%
Breakdown Voltage
5%
Single Chip
5%
Passivation
5%
Gate Capacitance
5%
Review Paper
5%
Material Science
Transistor
100%
Electron Mobility
82%
Graphene
58%
Indium Gallium Arsenide
56%
Field Effect Transistors
52%
Heterojunction
23%
Gallium Arsenide
12%
Surface (Surface Science)
11%
Silicon
10%
Capacitance
9%
Electrochemical Etching
9%
Dielectric Material
8%
Carrier Concentration
7%
Water Vapor
6%
Schottky Barrier
6%
Metal Surface
5%
Antenna
5%
Sapphire
5%
Physics
High Electron Mobility Transistors
59%
Plasmon
28%
Room Temperature
17%
Photonics
13%
Graphene
11%
Plasma Wave
10%
Noise equivalent power
9%
Electron Density
7%
Field Effect Transistor
6%
Threshold Voltage
6%
Heterojunctions
6%
Self Oscillation
5%
Spectrometer
5%
