Engineering
Magnetic Tunnel Junction
100%
Free Layer
35%
Terahertz
34%
Fits and Tolerances
29%
Layer Thickness
25%
Time Domain
25%
Nanowires
22%
Stability Factor
21%
Magnetic Field
20%
Process Integration Technology
20%
Easy Axis
20%
Magnetoelectronics
17%
Nanometre
17%
Free Field
17%
Physical Vapor Deposition
15%
Nanomaterial
15%
Energy Engineering
14%
Nodes
13%
Ten Year
11%
Slight Amount
11%
Conductive
11%
Magnetic Couplings
11%
Capping Layer
11%
Adsorption Capacity
11%
Electrical Measurement
11%
Quantitative Evaluation
11%
Low-Temperature
11%
Nanoparticles
11%
Pulsed Laser
11%
Arsenic
11%
Magnetic Nanoparticle
11%
Random Access Memory
11%
Nanostructure
11%
Tunnel Construction
11%
Anisotropy Energy
9%
Energy Density
8%
Magnetic Moment
7%
Adsorption
7%
Damage Control
7%
Annealing Temperature
6%
Photoemission
5%
Deposition Process
5%
Temperature Range
5%
Realization
5%
Measuring Temperature
5%
Hard X-Rays
5%
Resistance Ratio
5%
Picosecond
5%
Switching Time
5%
Dynamic Switching
5%
Material Science
Anisotropy
74%
Thermal Stability
74%
Magnesium Oxide
69%
Film
68%
Magnetic Property
60%
Transition Metal
57%
Tunneling Magnetoresistance
38%
Physical Vapor Deposition
28%
Reactive Ion Etching
28%
Nanowires
22%
Nanocrystalline Material
15%
Iridium
11%
Mechanical Strength
11%
Transistor
11%
Nucleation
11%
Oxidation Reaction
11%
Pulsed Laser Deposition
11%
Surface Treatment
11%
Domain Wall
11%
Arsenic
11%
Nanoparticle
11%
Magnetic Nanoparticle
11%
Thin Films
11%
Energy Density
8%
Oxide Compound
7%
X-Ray Photoelectron Spectroscopy
5%
Crystalline Material
5%
Annealing
5%
Ferromagnetic Material
5%
Energy-Dispersive X-Ray Spectroscopy
5%
Ionic Liquid
5%
Contact Resistance
5%
Metal Surface
5%
X-Ray Diffraction
5%
Physics
Exchange Bias
45%
Tunnel Junction
45%
Magnetic Anisotropy
33%
Magnetic Field
29%
Magnetic Properties
25%
Electric Fields
24%
Domain Wall
19%
Magnetic Domain
18%
Perpendicular Magnetic Anisotropy
18%
Thin Films
12%
Creep
11%
Coercivity
11%
Transition Metal
11%
Transition Element
11%
Spintronics
11%
Exchange Coupling
10%
Anisotropy
5%
Flux Density
5%
Free Electron
5%