Abstract
This paper describes a BiCMOS process for L-band Si-MMIC applications. Low loss transmission line, high performance bipolar transistor (emitter minimum size approximately 0.5 μm), 0.81 μm CMOS, and Schottky diode are integrated on a high resistivity silicon substrate (HRS). Losses of two types of transmission lines, which are composed of multilevel metal layers, are investigated in both high and low resistivity substrates. A low noise amplifier (LNA) is fabricated on a conventional low resistivity silicon substrate.
| Original language | English |
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| Pages | 134-137 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: 1996 Sept 29 → 1996 Oct 1 |
Conference
| Conference | Proceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
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| City | Minneapolis, MN, USA |
| Period | 96/9/29 → 96/10/1 |