This paper describes a BiCMOS process for L-band Si-MMIC applications. Low loss transmission line, high performance bipolar transistor (emitter minimum size approximately 0.5 μm), 0.81 μm CMOS, and Schottky diode are integrated on a high resistivity silicon substrate (HRS). Losses of two types of transmission lines, which are composed of multilevel metal layers, are investigated in both high and low resistivity substrates. A low noise amplifier (LNA) is fabricated on a conventional low resistivity silicon substrate.
|Number of pages||4|
|Publication status||Published - 1996|
|Event||Proceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA|
Duration: 1996 Sept 29 → 1996 Oct 1
|Conference||Proceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting|
|City||Minneapolis, MN, USA|
|Period||96/9/29 → 96/10/1|