0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

Shin Ichi O'Uchi; Yongxun Liu; Tadashi Nakagawa; Wataru Mizubayashi; Shinji Migita; Noriyuki Morita; Hiroyuki Ota; Yuki Ishikawa; Junichi Tsukada; Hanpei Koike; Meishoku Masahara; Kazuhiko Endo; Takashi Matsukawa

doi:10.1109/S3S.2015.7333536

0.8-V rail-to-rail operational amplifier with near-V_t gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

Shin Ichi O'Uchi, Yongxun Liu, Tadashi Nakagawa, Wataru Mizubayashi, Shinji Migita, Noriyuki Morita, Hiroyuki Ota, Yuki Ishikawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper demonstrates a 0.8-V rail-to-rail operational amplifier (op-amp) for ultra-low-power Internet-of-Things (IoT) sensor nodes. To suppress the leakage current in the logic part, a FinFET technology with 0.4-V threshold voltage (V_t), is chosen. To realize the rail-to-rail operation in the small common-mode (CM) voltage headroom, V_DD-V_t, a 4-stage chopper-stabilized topology with high-pass filters, multi-path hybrid-nested Miller compensation, and a push-pull output stage are introduced. A near-V_t amplifier is also introduced to the second stage to boost the gain. The fabricated op-amp shows 1MHz Gain-Bandwidth in whole of the CM voltage range.

Original language	English
Title of host publication	2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509002597
DOIs	https://doi.org/10.1109/S3S.2015.7333536
Publication status	Published - 2015 Nov 20
Externally published	Yes
Event	IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 - Rohnert Park, United States Duration: 2015 Oct 5 → 2015 Oct 8

Publication series

Name	2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015

Other

Other	IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Country/Territory	United States
City	Rohnert Park
Period	15/10/5 → 15/10/8

Keywords

FinFET
chopper stabilized op-amp
near threshold operation
push-pull buffer

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/S3S.2015.7333536

Cite this

O'Uchi, S. I., Liu, Y., Nakagawa, T., Mizubayashi, W., Migita, S., Morita, N., Ota, H., Ishikawa, Y., Tsukada, J., Koike, H., Masahara, M., Endo, K., & Matsukawa, T. (2015). 0.8-V rail-to-rail operational amplifier with near-V_t gain-boosting stage fabricated in FinFET technology for IoT sensor nodes. In 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 [7333536] (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2015.7333536

0.8-V rail-to-rail operational amplifier with near-V_t gain-boosting stage fabricated in FinFET technology for IoT sensor nodes. / O'Uchi, Shin Ichi; Liu, Yongxun; Nakagawa, Tadashi et al.

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7333536 (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

O'Uchi, SI, Liu, Y, Nakagawa, T, Mizubayashi, W, Migita, S, Morita, N, Ota, H, Ishikawa, Y, Tsukada, J, Koike, H, Masahara, M, Endo, K & Matsukawa, T 2015, 0.8-V rail-to-rail operational amplifier with near-V_t gain-boosting stage fabricated in FinFET technology for IoT sensor nodes. in 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015., 7333536, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Institute of Electrical and Electronics Engineers Inc., IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Rohnert Park, United States, 15/10/5. https://doi.org/10.1109/S3S.2015.7333536

O'Uchi SI, Liu Y, Nakagawa T, Mizubayashi W, Migita S, Morita N et al. 0.8-V rail-to-rail operational amplifier with near-V_t gain-boosting stage fabricated in FinFET technology for IoT sensor nodes. In 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7333536. (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015). doi: 10.1109/S3S.2015.7333536

O'Uchi, Shin Ichi ; Liu, Yongxun ; Nakagawa, Tadashi et al. / 0.8-V rail-to-rail operational amplifier with near-V_t gain-boosting stage fabricated in FinFET technology for IoT sensor nodes. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015).

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AU - Mizubayashi, Wataru

AU - Migita, Shinji

AU - Morita, Noriyuki

AU - Ota, Hiroyuki

AU - Ishikawa, Yuki

AU - Tsukada, Junichi

AU - Koike, Hanpei

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N2 - This paper demonstrates a 0.8-V rail-to-rail operational amplifier (op-amp) for ultra-low-power Internet-of-Things (IoT) sensor nodes. To suppress the leakage current in the logic part, a FinFET technology with 0.4-V threshold voltage (Vt), is chosen. To realize the rail-to-rail operation in the small common-mode (CM) voltage headroom, VDD-Vt, a 4-stage chopper-stabilized topology with high-pass filters, multi-path hybrid-nested Miller compensation, and a push-pull output stage are introduced. A near-Vt amplifier is also introduced to the second stage to boost the gain. The fabricated op-amp shows 1MHz Gain-Bandwidth in whole of the CM voltage range.

AB - This paper demonstrates a 0.8-V rail-to-rail operational amplifier (op-amp) for ultra-low-power Internet-of-Things (IoT) sensor nodes. To suppress the leakage current in the logic part, a FinFET technology with 0.4-V threshold voltage (Vt), is chosen. To realize the rail-to-rail operation in the small common-mode (CM) voltage headroom, VDD-Vt, a 4-stage chopper-stabilized topology with high-pass filters, multi-path hybrid-nested Miller compensation, and a push-pull output stage are introduced. A near-Vt amplifier is also introduced to the second stage to boost the gain. The fabricated op-amp shows 1MHz Gain-Bandwidth in whole of the CM voltage range.

KW - FinFET

KW - chopper stabilized op-amp

KW - near threshold operation

KW - push-pull buffer

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