10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack

Yuki Ohara; Akihiro Noriki; Katsuyuki Sakuma; Kang Wook Lee; Mariappan Murugesan; Jichoel Bea; Fumiaki Yamada; Takafumi Fukushima; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1109/3DIC.2009.5306532

10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack

Yuki Ohara, Akihiro Noriki, Katsuyuki Sakuma, Kang Wook Lee, Mariappan Murugesan, Jichoel Bea, Fumiaki Yamada, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

46 Citations (Scopus)

Abstract

We develop novel micro-bumping technology to realize small size, fine pitch and uniform height Cu/Sn bumps. Electroplated -evaporation bumping (EEB) technology, which is a combination of Cu electroplating and Sn evaporation, is developed to achieve uniform height of Cu/Sn bumps. We develop CMOS compatible dry etching processes for removing sputtered Cu/Ta layers to achieve small size and fine pitch Cu/Sn bump. 5 μm square and 10 μm pitch Cu/Sn micro-bumps are successfully fabricated for the first time. Bump height variation is 5 μm ±3 % (95%, 2σ), which is uniform compared to electroplated Cu/Sn bumps. We evaluate micro-joining characteristics of Cu/Sn micro-bumps. Good I-V characteristics are measured from the daisy chain consisting of 1500 bumps with 10 μm square and 20 μm pitch. Resistance of Cu/Sn bump is 35 mω/bump, which is very low value compared to electroplated Cu/Sn bumps.

Original language	English
Title of host publication	2009 IEEE International Conference on 3D System Integration, 3DIC 2009
DOIs	https://doi.org/10.1109/3DIC.2009.5306532
Publication status	Published - 2009
Event	2009 IEEE International Conference on 3D System Integration, 3DIC 2009 - San Francisco, CA, United States Duration: 2009 Sept 28 → 2009 Sept 30

Publication series

Name	2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Conference

Conference	2009 IEEE International Conference on 3D System Integration, 3DIC 2009
Country/Territory	United States
City	San Francisco, CA
Period	09/9/28 → 09/9/30

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10.1109/3DIC.2009.5306532

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Ohara, Y., Noriki, A., Sakuma, K., Lee, K. W., Murugesan, M., Bea, J., Yamada, F., Fukushima, T., Tanaka, T., & Koyanagi, M. (2009). 10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack. In 2009 IEEE International Conference on 3D System Integration, 3DIC 2009 Article 5306532 (2009 IEEE International Conference on 3D System Integration, 3DIC 2009). https://doi.org/10.1109/3DIC.2009.5306532

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title = "10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack",

abstract = "We develop novel micro-bumping technology to realize small size, fine pitch and uniform height Cu/Sn bumps. Electroplated -evaporation bumping (EEB) technology, which is a combination of Cu electroplating and Sn evaporation, is developed to achieve uniform height of Cu/Sn bumps. We develop CMOS compatible dry etching processes for removing sputtered Cu/Ta layers to achieve small size and fine pitch Cu/Sn bump. 5 μm square and 10 μm pitch Cu/Sn micro-bumps are successfully fabricated for the first time. Bump height variation is 5 μm ±3 % (95%, 2σ), which is uniform compared to electroplated Cu/Sn bumps. We evaluate micro-joining characteristics of Cu/Sn micro-bumps. Good I-V characteristics are measured from the daisy chain consisting of 1500 bumps with 10 μm square and 20 μm pitch. Resistance of Cu/Sn bump is 35 mω/bump, which is very low value compared to electroplated Cu/Sn bumps.",

author = "Yuki Ohara and Akihiro Noriki and Katsuyuki Sakuma and Lee, {Kang Wook} and Mariappan Murugesan and Jichoel Bea and Fumiaki Yamada and Takafumi Fukushima and Tetsu Tanaka and Mitsumasa Koyanagi",

year = "2009",

doi = "10.1109/3DIC.2009.5306532",

language = "English",

isbn = "9781424445127",

series = "2009 IEEE International Conference on 3D System Integration, 3DIC 2009",

booktitle = "2009 IEEE International Conference on 3D System Integration, 3DIC 2009",

note = "2009 IEEE International Conference on 3D System Integration, 3DIC 2009 ; Conference date: 28-09-2009 Through 30-09-2009",

}

Ohara, Y, Noriki, A, Sakuma, K, Lee, KW, Murugesan, M, Bea, J, Yamada, F, Fukushima, T , Tanaka, T & Koyanagi, M 2009, 10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack. in 2009 IEEE International Conference on 3D System Integration, 3DIC 2009., 5306532, 2009 IEEE International Conference on 3D System Integration, 3DIC 2009, 2009 IEEE International Conference on 3D System Integration, 3DIC 2009, San Francisco, CA, United States, 09/9/28. https://doi.org/10.1109/3DIC.2009.5306532

10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack. / Ohara, Yuki; Noriki, Akihiro; Sakuma, Katsuyuki et al.
2009 IEEE International Conference on 3D System Integration, 3DIC 2009. 2009. 5306532 (2009 IEEE International Conference on 3D System Integration, 3DIC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ohara, Yuki

AU - Noriki, Akihiro

AU - Sakuma, Katsuyuki

AU - Lee, Kang Wook

AU - Murugesan, Mariappan

AU - Bea, Jichoel

AU - Yamada, Fumiaki

AU - Fukushima, Takafumi

AU - Tanaka, Tetsu

AU - Koyanagi, Mitsumasa

PY - 2009

Y1 - 2009

N2 - We develop novel micro-bumping technology to realize small size, fine pitch and uniform height Cu/Sn bumps. Electroplated -evaporation bumping (EEB) technology, which is a combination of Cu electroplating and Sn evaporation, is developed to achieve uniform height of Cu/Sn bumps. We develop CMOS compatible dry etching processes for removing sputtered Cu/Ta layers to achieve small size and fine pitch Cu/Sn bump. 5 μm square and 10 μm pitch Cu/Sn micro-bumps are successfully fabricated for the first time. Bump height variation is 5 μm ±3 % (95%, 2σ), which is uniform compared to electroplated Cu/Sn bumps. We evaluate micro-joining characteristics of Cu/Sn micro-bumps. Good I-V characteristics are measured from the daisy chain consisting of 1500 bumps with 10 μm square and 20 μm pitch. Resistance of Cu/Sn bump is 35 mω/bump, which is very low value compared to electroplated Cu/Sn bumps.

AB - We develop novel micro-bumping technology to realize small size, fine pitch and uniform height Cu/Sn bumps. Electroplated -evaporation bumping (EEB) technology, which is a combination of Cu electroplating and Sn evaporation, is developed to achieve uniform height of Cu/Sn bumps. We develop CMOS compatible dry etching processes for removing sputtered Cu/Ta layers to achieve small size and fine pitch Cu/Sn bump. 5 μm square and 10 μm pitch Cu/Sn micro-bumps are successfully fabricated for the first time. Bump height variation is 5 μm ±3 % (95%, 2σ), which is uniform compared to electroplated Cu/Sn bumps. We evaluate micro-joining characteristics of Cu/Sn micro-bumps. Good I-V characteristics are measured from the daisy chain consisting of 1500 bumps with 10 μm square and 20 μm pitch. Resistance of Cu/Sn bump is 35 mω/bump, which is very low value compared to electroplated Cu/Sn bumps.

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M3 - Conference contribution

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T3 - 2009 IEEE International Conference on 3D System Integration, 3DIC 2009

BT - 2009 IEEE International Conference on 3D System Integration, 3DIC 2009

T2 - 2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Y2 - 28 September 2009 through 30 September 2009

ER -

10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack

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