10 Tbit/inch2 ferroelectric data storage with offset voltage application method

Sunao Hashimoto, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch 2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

Original languageEnglish
Title of host publicationFerroelectric Thin Films XIII
PublisherMaterials Research Society
Number of pages6
ISBN (Print)155899856X, 9781558998568
Publication statusPublished - 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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