10 Tbit/inch2 ferroelectric data storage with offset voltage application method

Sunao Hashimoto; Yasuo Cho

doi:10.1557/proc-0902-t10-42

10 Tbit/inch² ferroelectric data storage with offset voltage application method

Sunao Hashimoto, Yasuo Cho

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch ² was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

Original language	English
Title of host publication	Ferroelectric Thin Films XIII
Publisher	Materials Research Society
Pages	245-250
Number of pages	6
ISBN (Print)	155899856X, 9781558998568
DOIs	https://doi.org/10.1557/proc-0902-t10-42
Publication status	Published - 2005
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: 2005 Nov 28 → 2005 Dec 1

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	902
ISSN (Print)	0272-9172

Conference

Conference	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	05/11/28 → 05/12/1

Access to Document

10.1557/proc-0902-t10-42

Cite this

@inproceedings{452be89545614649ba561f5eba77aa12,

title = "10 Tbit/inch2 ferroelectric data storage with offset voltage application method",

abstract = "Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch 2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.",

author = "Sunao Hashimoto and Yasuo Cho",

year = "2005",

doi = "10.1557/proc-0902-t10-42",

language = "English",

isbn = "155899856X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "245--250",

booktitle = "Ferroelectric Thin Films XIII",

note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 01-12-2005",

}

TY - GEN

T1 - 10 Tbit/inch2 ferroelectric data storage with offset voltage application method

AU - Hashimoto, Sunao

AU - Cho, Yasuo

PY - 2005

Y1 - 2005

N2 - Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch 2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

AB - Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch 2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

UR - http://www.scopus.com/inward/record.url?scp=34249950970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249950970&partnerID=8YFLogxK

U2 - 10.1557/proc-0902-t10-42

DO - 10.1557/proc-0902-t10-42

M3 - Conference contribution

AN - SCOPUS:34249950970

SN - 155899856X

SN - 9781558998568

T3 - Materials Research Society Symposium Proceedings

SP - 245

EP - 250

BT - Ferroelectric Thin Films XIII

PB - Materials Research Society

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 1 December 2005

ER -