10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

Taiichi Otsuji; Kazutoshi Kato; Tadao Nagatsuma; Mikio Yoneyama

10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

Taiichi Otsuji, Kazutoshi Kato, Tadao Nagatsuma, Mikio Yoneyama

RIEC - Information Communication Platforms Division

Nippon Telegraph & Telephone

Research output: Contribution to conference › Paper › peer-review

10 Citations (Scopus)

Abstract

A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.

Original language	English
Pages	203-204
Number of pages	2
Publication status	Published - 1994
Event	Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) - Boston, MA, USA Duration: 1994 Oct 31 → 1994 Nov 3

Conference

Conference	Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)
City	Boston, MA, USA
Period	94/10/31 → 94/11/3

Cite this

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title = "10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices",

abstract = "A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.",

author = "Taiichi Otsuji and Kazutoshi Kato and Tadao Nagatsuma and Mikio Yoneyama",

year = "1994",

language = "English",

pages = "203--204",

note = "Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) ; Conference date: 31-10-1994 Through 03-11-1994",

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10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices. / Otsuji, Taiichi; Kato, Kazutoshi; Nagatsuma, Tadao et al.
1994. 203-204 Paper presented at Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2), Boston, MA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - 10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

AU - Otsuji, Taiichi

AU - Kato, Kazutoshi

AU - Nagatsuma, Tadao

AU - Yoneyama, Mikio

PY - 1994

Y1 - 1994

N2 - A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.

AB - A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.

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M3 - Paper

AN - SCOPUS:0028714235

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T2 - Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)

Y2 - 31 October 1994 through 3 November 1994

ER -

10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

Abstract

Conference

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