(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma

Tatsufumi Hamada; Yuji Saito; Masaki Hirayama; Sigetoshi Sugawa; Herzl Aharoni; Tadahiro Ohmi

doi:10.1109/66.964329

(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O₂ microwave-excited high-density plasma

Tatsufumi Hamada, Yuji Saito, Masaki Hirayama, Sigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Letter › peer-review

5 Citations (Scopus)

Abstract

A drastic reduction in the growth temperature (400°C) of highly reliable SiO₂ gate oxides grown by a Kr/O₂ microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

Original language	English
Pages (from-to)	418-420
Number of pages	3
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/66.964329
Publication status	Published - 2001 Nov

Keywords

Low-temperature process
Oxygen radical
Plasma process
Surface orientation

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10.1109/66.964329

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abstract = "A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.",

keywords = "Low-temperature process, Oxygen radical, Plasma process, Surface orientation",

author = "Tatsufumi Hamada and Yuji Saito and Masaki Hirayama and Sigetoshi Sugawa and Herzl Aharoni and Tadahiro Ohmi",

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journal = "IEEE Transactions on Semiconductor Manufacturing",

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T1 - (100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O2 microwave-excited high-density plasma

AU - Hamada, Tatsufumi

AU - Saito, Yuji

AU - Hirayama, Masaki

AU - Sugawa, Sigetoshi

AU - Aharoni, Herzl

AU - Ohmi, Tadahiro

PY - 2001/11

Y1 - 2001/11

N2 - A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

AB - A drastic reduction in the growth temperature (400°C) of highly reliable SiO2 gate oxides grown by a Kr/O2 microwave-excited high-density plasma technique is shown to yield MOS I-V characteristics comparable to those obtained in transistors with conventionally grown dry gate oxides at 900°C. The benefits of this technique are summarized.

KW - Low-temperature process

KW - Oxygen radical

KW - Plasma process

KW - Surface orientation

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DO - 10.1109/66.964329

M3 - Letter

AN - SCOPUS:0035507941

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VL - 14

SP - 418

EP - 420

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 4

ER -

(100) and (111) Si MOS transistors fabricated with low growth temperature (400°C) gate oxide by Kr/O₂ microwave-excited high-density plasma

Abstract

Keywords

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