100-GHz fT Si homojunction bipolar technology

Eiji Ohue; Yukihiro Kiyota; Takahiro Onai; Masamichi Tanabe; Katsuyoshi Washio

100-GHz f_T Si homojunction bipolar technology

Eiji Ohue, Yukihiro Kiyota, Takahiro Onai, Masamichi Tanabe, Katsuyoshi Washio

Research output: Contribution to journal › Conference article › peer-review

Abstract

Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.

Original language	English
Pages (from-to)	106-107
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1996 Jun 11 → 1996 Jun 13

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "100-GHz fT Si homojunction bipolar technology",

abstract = "Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.",

author = "Eiji Ohue and Yukihiro Kiyota and Takahiro Onai and Masamichi Tanabe and Katsuyoshi Washio",

year = "1996",

month = jan,

day = "1",

language = "English",

pages = "106--107",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 Symposium on VLSI Technology ; Conference date: 11-06-1996 Through 13-06-1996",

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TY - JOUR

T1 - 100-GHz fT Si homojunction bipolar technology

AU - Ohue, Eiji

AU - Kiyota, Yukihiro

AU - Onai, Takahiro

AU - Tanabe, Masamichi

AU - Washio, Katsuyoshi

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.

AB - Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029717428&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029717428

SN - 0743-1562

SP - 106

EP - 107

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1996 Symposium on VLSI Technology

Y2 - 11 June 1996 through 13 June 1996

ER -

100-GHz f_T Si homojunction bipolar technology

Abstract

ASJC Scopus subject areas

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