An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCE0 of more than 10 V and an fT of 5 GHz, and lateral p-n-p transistors having an fT of 150 MHz.
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1985 Feb|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering