Abstract
An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCE0 of more than 10 V and an fT of 5 GHz, and lateral p-n-p transistors having an fT of 150 MHz.
Original language | English |
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Pages (from-to) | 237-241 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 32 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1985 Feb |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering