10K Gate I2L and 1K Component Analog Compatible Bipolar VLSI Technology—HIT-2

Katsuyoshi Washio, Tomoyuki Watanabe, Takahiro Okabe, Noboru Horie

Research output: Contribution to journalArticlepeer-review


An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCE0 of more than 10 V and an fT of 5 GHz, and lateral p-n-p transistors having an fT of 150 MHz.

Original languageEnglish
Pages (from-to)237-241
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 1985 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of '10K Gate I2L and 1K Component Analog Compatible Bipolar VLSI Technology—HIT-2'. Together they form a unique fingerprint.

Cite this