TY - GEN
T1 - 116GHz CMOS injection locked oscillator with -99.3dBc/Hz at 1MHz offset phase noise
AU - Motoyoshi, Mizuki
AU - Fujishima, Minoru
PY - 2010/12/1
Y1 - 2010/12/1
N2 - To satisfy consumer demand for ultrahigh-speed wireless communication, oscillator in the D-band using CMOS as well as compound semiconductors are under development. However, the phase noise is large because a small device is used to achieve a high operating frequency. In the D-band oscillator, suppressing 1/f noise is effective in the improving the phase noise. In this study, a 116GHz CMOS injection locked oscillator (ILO) with 99.3dBc/Hz at 1MHz offset phase noise is proposed. To improve the phase noise, a master-slave topology and injection locking are used. The circuit is fabricated by 65nm 1P12M CMOS process. The core size of the chip is 530×520m2 including pads. At a supply voltage of 0.6V, the phase noise was 99.3dBc/Hz at 1MHz offset, and the power consumption was 1.45mW. The oscillator can be tuned from 116.05 to 116.57GHz. The FOM of the proposed ILO is 18.7dB higher than those of previously reported oscillators.
AB - To satisfy consumer demand for ultrahigh-speed wireless communication, oscillator in the D-band using CMOS as well as compound semiconductors are under development. However, the phase noise is large because a small device is used to achieve a high operating frequency. In the D-band oscillator, suppressing 1/f noise is effective in the improving the phase noise. In this study, a 116GHz CMOS injection locked oscillator (ILO) with 99.3dBc/Hz at 1MHz offset phase noise is proposed. To improve the phase noise, a master-slave topology and injection locking are used. The circuit is fabricated by 65nm 1P12M CMOS process. The core size of the chip is 530×520m2 including pads. At a supply voltage of 0.6V, the phase noise was 99.3dBc/Hz at 1MHz offset, and the power consumption was 1.45mW. The oscillator can be tuned from 116.05 to 116.57GHz. The FOM of the proposed ILO is 18.7dB higher than those of previously reported oscillators.
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M3 - Conference contribution
AN - SCOPUS:79955731605
SN - 9784902339222
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 786
EP - 789
BT - 2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
T2 - 2010 Asia-Pacific Microwave Conference, APMC 2010
Y2 - 7 December 2010 through 10 December 2010
ER -