13.56 and 100 MHz coupled mode Rf-sputtering for ferroelectric Sr 2(Ta1-x,Nbx)2O7 (STN) film applied to one-transistor type ferroelectric random access memory

Ichirou Takahashi, Masaki Hirayama, Yasuyuki Shirai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

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