TY - GEN
T1 - 135GHz CMOS small-signal amplifier with power-efficient bias method
AU - Motoyoshi, Mizuki
AU - Takano, Kyoya
AU - Katayama, Kosuke
AU - Fujishima, Minoru
PY - 2013
Y1 - 2013
N2 - A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.
AB - A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.
KW - CMOS
KW - D-band
KW - high power efficiency
KW - millimeter wave
KW - small-signal amplifier
KW - wideband
UR - http://www.scopus.com/inward/record.url?scp=84893354235&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893354235&partnerID=8YFLogxK
U2 - 10.1109/APMC.2013.6695142
DO - 10.1109/APMC.2013.6695142
M3 - Conference contribution
AN - SCOPUS:84893354235
SN - 9781479914746
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 348
EP - 350
BT - 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
T2 - 2013 3rd Asia-Pacific Microwave Conference, APMC 2013
Y2 - 5 November 2013 through 8 November 2013
ER -