1.5 μm Multiple-Quantum-Well Distributed Feedback Laser Diodes Grown on Corrugated inp by Movpe

M. Kitamura; S. Takano; N. Henmi; T. Sasaki; H. Yamada; I. Mito; Y. Shinohara; H. Hasumi

doi:10.1049/el:19880711

1.5 μm Multiple-Quantum-Well Distributed Feedback Laser Diodes Grown on Corrugated inp by Movpe

M. Kitamura, S. Takano, N. Henmi, T. Sasaki, H. Yamada, I. Mito, Y. Shinohara, H. Hasumi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

1.5 μm band GalnAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.

Original language	English
Pages (from-to)	1045-1046
Number of pages	2
Journal	Electronics Letters
Volume	24
Issue number	16
DOIs	https://doi.org/10.1049/el:19880711
Publication status	Published - 1988
Externally published	Yes

Keywords

Epitaxy and epitaxial growth
Quantum optics
Semiconductor growth
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19880711

Cite this

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title = "1.5 μm Multiple-Quantum-Well Distributed Feedback Laser Diodes Grown on Corrugated inp by Movpe",

abstract = "1.5 μm band GalnAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.",

keywords = "Epitaxy and epitaxial growth, Quantum optics, Semiconductor growth, Semiconductor lasers",

author = "M. Kitamura and S. Takano and N. Henmi and T. Sasaki and H. Yamada and I. Mito and Y. Shinohara and H. Hasumi",

year = "1988",

doi = "10.1049/el:19880711",

language = "English",

volume = "24",

pages = "1045--1046",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "16",

}

TY - JOUR

T1 - 1.5 μm Multiple-Quantum-Well Distributed Feedback Laser Diodes Grown on Corrugated inp by Movpe

AU - Kitamura, M.

AU - Takano, S.

AU - Henmi, N.

AU - Sasaki, T.

AU - Yamada, H.

AU - Mito, I.

AU - Shinohara, Y.

AU - Hasumi, H.

PY - 1988

Y1 - 1988

N2 - 1.5 μm band GalnAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.

AB - 1.5 μm band GalnAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.

KW - Epitaxy and epitaxial growth

KW - Quantum optics

KW - Semiconductor growth

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0024277843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024277843&partnerID=8YFLogxK

U2 - 10.1049/el:19880711

DO - 10.1049/el:19880711

M3 - Article

AN - SCOPUS:0024277843

SN - 0013-5194

VL - 24

SP - 1045

EP - 1046

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

1.5 μm Multiple-Quantum-Well Distributed Feedback Laser Diodes Grown on Corrugated inp by Movpe

Abstract

Keywords

ASJC Scopus subject areas

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