175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

N. Tezuka; N. Ikeda; S. Sugimoto; K. Inomata

doi:10.1063/1.2420793

175% tunnel magnetoresistance at room temperature and high thermal stability using Co₂FeAl_0.5Si_0.5 full-Heusler alloy electrodes

N. Tezuka, N. Ikeda, S. Sugimoto, K. Inomata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L 21 - Co2 Fe Al0.5 Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO =1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 °C and then decrease by annealing, while for tMgO =2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 °C. The TMR ratio up to 175% at RT and thermal stability up to 500 °C have been achieved for tMgO =2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2 Fe Al0.5 Si0.5 with L 21 structure.

Original language	English
Article number	252508
Journal	Applied Physics Letters
Volume	89
Issue number	25
DOIs	https://doi.org/10.1063/1.2420793
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes",

abstract = "The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L 21 - Co2 Fe Al0.5 Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO =1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 °C and then decrease by annealing, while for tMgO =2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 °C. The TMR ratio up to 175% at RT and thermal stability up to 500 °C have been achieved for tMgO =2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2 Fe Al0.5 Si0.5 with L 21 structure.",

author = "N. Tezuka and N. Ikeda and S. Sugimoto and K. Inomata",

note = "Funding Information: This work was partly supported by the IT-Program RR2002 from MEXT and Industrial Technology Research Grant in {\textquoteright} from New Energy and Industrial Technology Development Organization of Japan.",

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T1 - 175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

AU - Tezuka, N.

AU - Ikeda, N.

AU - Sugimoto, S.

AU - Inomata, K.

N1 - Funding Information: This work was partly supported by the IT-Program RR2002 from MEXT and Industrial Technology Research Grant in ’ from New Energy and Industrial Technology Development Organization of Japan.

PY - 2006

Y1 - 2006

N2 - The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L 21 - Co2 Fe Al0.5 Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO =1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 °C and then decrease by annealing, while for tMgO =2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 °C. The TMR ratio up to 175% at RT and thermal stability up to 500 °C have been achieved for tMgO =2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2 Fe Al0.5 Si0.5 with L 21 structure.

AB - The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L 21 - Co2 Fe Al0.5 Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO =1.5 nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350 °C and then decrease by annealing, while for tMgO =2.0 and 2.5 nm, the TMR ratio increases with annealing temperature and peaks around 500 °C. The TMR ratio up to 175% at RT and thermal stability up to 500 °C have been achieved for tMgO =2.0 nm, suggesting the large tunneling spin polarization and high thermal stability for Co2 Fe Al0.5 Si0.5 with L 21 structure.

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175% tunnel magnetoresistance at room temperature and high thermal stability using Co₂FeAl_0.5Si_0.5 full-Heusler alloy electrodes

Abstract

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