1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

Masatoshi Nakayama; Ken ichi Horiguchi; Kazuya Yamamoto; Yutaka Yoshii; Shigeru Sugiyama; Norihiro Suematsu; Tadashi Takagi

1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

Masatoshi Nakayama, Ken ichi Horiguchi, Kazuya Yamamoto, Yutaka Yoshii, Shigeru Sugiyama, Norihiro Suematsu, Tadashi Takagi

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end of terminals.

Original language	English
Pages (from-to)	171-174
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{5e6f754b728344f1ae54d040993d3621,

title = "1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals",

abstract = "This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end of terminals.",

author = "Masatoshi Nakayama and Horiguchi, {Ken ichi} and Kazuya Yamamoto and Yutaka Yoshii and Shigeru Sugiyama and Norihiro Suematsu and Tadashi Takagi",

year = "1998",

month = jan,

day = "1",

language = "English",

volume = "1",

pages = "171--174",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 07-06-1998 Through 12-06-1998",

}

TY - JOUR

T1 - 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

AU - Nakayama, Masatoshi

AU - Horiguchi, Ken ichi

AU - Yamamoto, Kazuya

AU - Yoshii, Yutaka

AU - Sugiyama, Shigeru

AU - Suematsu, Norihiro

AU - Takagi, Tadashi

PY - 1998/1/1

Y1 - 1998/1/1

N2 - This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end of terminals.

AB - This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as RF front-end of terminals.

UR - http://www.scopus.com/inward/record.url?scp=0031630372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031630372&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031630372

SN - 0149-645X

VL - 1

SP - 171

EP - 174

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 7 June 1998 through 12 June 1998

ER -

1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this