TY - GEN
T1 - 190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor
AU - Fujihara, Yasuyuki
AU - Nasuno, Satoshi
AU - Wakashima, Shunichi
AU - Aoyagi, Yusuke
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/1/5
Y1 - 2016/1/5
N2 - A 190-1100nm waveband multispectral imaging system is presented utilizing a high light resistance, wide dynamic range CMOS image sensor. The specially developed prototype image sensor exhibited 190-1100nm spectral sensitivity, 94dB wide dynamic range with 87ke- full well capacity and 1200fps frame rate, and no degradation of light sensitivity and dark current was observed after strong UV-light irradiation stress. With the developed system, real-time multispectral imaging using UV-Visible-Near IR light waveband was successfully conducted.
AB - A 190-1100nm waveband multispectral imaging system is presented utilizing a high light resistance, wide dynamic range CMOS image sensor. The specially developed prototype image sensor exhibited 190-1100nm spectral sensitivity, 94dB wide dynamic range with 87ke- full well capacity and 1200fps frame rate, and no degradation of light sensitivity and dark current was observed after strong UV-light irradiation stress. With the developed system, real-time multispectral imaging using UV-Visible-Near IR light waveband was successfully conducted.
KW - CMOS image sensor
KW - Spectral imaging
KW - UV-Visible-Near IR light waveband
UR - http://www.scopus.com/inward/record.url?scp=85010953754&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010953754&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2016.7808492
DO - 10.1109/ICSENS.2016.7808492
M3 - Conference contribution
AN - SCOPUS:85010953754
T3 - Proceedings of IEEE Sensors
BT - IEEE Sensors, SENSORS 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th IEEE Sensors Conference, SENSORS 2016
Y2 - 30 October 2016 through 2 November 2016
ER -