190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Yukihiro Kiyota; Takashi Hashimoto; Tsutomu Udo; Akihiro Kodama; Hiromi Shimamoto; Reiko Hayami; Katsuyoshi Washio

190-GHz f_T, 130-GHz f_max SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

Yukihiro Kiyota, Takashi Hashimoto, Tsutomu Udo, Akihiro Kodama, Hiromi Shimamoto, Reiko Hayami, Katsuyoshi Washio

Research output: Contribution to conference › Paper › peer-review

Abstract

A heavily-boron-doped SiGe base was formed by HCl-free selective epitaxial growth using LPCVD. This HCl-free growth enabled us to obtain high growth rate at low temperature and to suppress surface roughening of heavily-boron-doped SiGe. HBTs were fabricated with base regions with high boron concentration, i. e. 2.4 × 10²⁰ cm^-3. An accurately and appropriately designed boron profile produced HBTs with f_T of 190 and f_max of 130 GHz. By modifying the impurity profiles in the intrinsic region, f_T was increased above 200 GHz. These high-performance HBTs were implemented in a multiplexer and a demultiplexer, and resulted in faster than S0-Gb/s performance.

Original language	English
Pages	139-142
Number of pages	4
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 2002 Sept 29 → 2002 Oct 1

Other

Other	2002 IEEE Biopolar/BicMOS and Technology Meeting
Country/Territory	United States
City	Minneapolis
Period	02/9/29 → 02/10/1

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy",

abstract = "A heavily-boron-doped SiGe base was formed by HCl-free selective epitaxial growth using LPCVD. This HCl-free growth enabled us to obtain high growth rate at low temperature and to suppress surface roughening of heavily-boron-doped SiGe. HBTs were fabricated with base regions with high boron concentration, i. e. 2.4 × 1020 cm-3. An accurately and appropriately designed boron profile produced HBTs with fT of 190 and fmax of 130 GHz. By modifying the impurity profiles in the intrinsic region, fT was increased above 200 GHz. These high-performance HBTs were implemented in a multiplexer and a demultiplexer, and resulted in faster than S0-Gb/s performance.",

author = "Yukihiro Kiyota and Takashi Hashimoto and Tsutomu Udo and Akihiro Kodama and Hiromi Shimamoto and Reiko Hayami and Katsuyoshi Washio",

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T1 - 190-GHz fT, 130-GHz fmax SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

AU - Kiyota, Yukihiro

AU - Hashimoto, Takashi

AU - Udo, Tsutomu

AU - Kodama, Akihiro

AU - Shimamoto, Hiromi

AU - Hayami, Reiko

AU - Washio, Katsuyoshi

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A heavily-boron-doped SiGe base was formed by HCl-free selective epitaxial growth using LPCVD. This HCl-free growth enabled us to obtain high growth rate at low temperature and to suppress surface roughening of heavily-boron-doped SiGe. HBTs were fabricated with base regions with high boron concentration, i. e. 2.4 × 1020 cm-3. An accurately and appropriately designed boron profile produced HBTs with fT of 190 and fmax of 130 GHz. By modifying the impurity profiles in the intrinsic region, fT was increased above 200 GHz. These high-performance HBTs were implemented in a multiplexer and a demultiplexer, and resulted in faster than S0-Gb/s performance.

AB - A heavily-boron-doped SiGe base was formed by HCl-free selective epitaxial growth using LPCVD. This HCl-free growth enabled us to obtain high growth rate at low temperature and to suppress surface roughening of heavily-boron-doped SiGe. HBTs were fabricated with base regions with high boron concentration, i. e. 2.4 × 1020 cm-3. An accurately and appropriately designed boron profile produced HBTs with fT of 190 and fmax of 130 GHz. By modifying the impurity profiles in the intrinsic region, fT was increased above 200 GHz. These high-performance HBTs were implemented in a multiplexer and a demultiplexer, and resulted in faster than S0-Gb/s performance.

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T2 - 2002 IEEE Biopolar/BicMOS and Technology Meeting

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ER -

190-GHz f_T, 130-GHz f_max SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

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