Abstract
We focus on 1/f noise appears in MOSFETs. In wafer fabrication processes, plasma discharge is often used for etching, photoresist ashing, plasma enhanced CVD, and so on. After gate electrode formation, an electrical field higher than the device operation limit might be applied between the gate and substrate due to, so called, plasma damage. Such high field stress can result in a significant increase in low frequency noise in MOSFETs. The purpose of this work is to investigate in detail the degradation of 1/f noise levels caused by Fowler-Nordheim tunneling stress.
| Original language | English |
|---|---|
| Pages (from-to) | 313-317 |
| Number of pages | 5 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| Publication status | Published - 2003 |
| Event | 2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States Duration: 2003 Mar 30 → 2003 Apr 4 |
Keywords
- 1/f noise
- Border traps
- Fowler-Nordheim tunneling
- MOS FET
- Plasma damage
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality