21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs)

Takahiro Ohnakado; Satoshi Yamakawa; Takaaki Murakami; Akihiko Furukawa; Eiji Taniguchi; Hiro Omi Ueda; Noriharu Suematsu; Tatsuo Oomori

21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs)

Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro Omi Ueda, Noriharu Suematsu, Tatsuo Oomori

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

This paper reports for the first time an over-20dBm power-handling 5GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (I_L) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode I_L (I _L@RX) of as low as 1.44dB at 5GHz is accomplished with the benefit of the I_L improvement effects in the DET, in addition to a very low transmit-mode I_L (I_L@TX) of 0.95dB at 5GHz.

Original language	English
Pages	25-28
Number of pages	4
Publication status	Published - 2003 Oct 2
Externally published	Yes
Event	2003 Symposium on VLSI Circuits - Kyoto, Japan Duration: 2003 Jun 12 → 2003 Jun 14

Other

Other	2003 Symposium on VLSI Circuits
Country/Territory	Japan
City	Kyoto
Period	03/6/12 → 03/6/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Ohnakado, T., Yamakawa, S., Murakami, T., Furukawa, A., Taniguchi, E., Ueda, H. O., Suematsu, N., & Oomori, T. (2003). 21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs). 25-28. Paper presented at 2003 Symposium on VLSI Circuits, Kyoto, Japan.

21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs). / Ohnakado, Takahiro; Yamakawa, Satoshi; Murakami, Takaaki et al.
2003. 25-28 Paper presented at 2003 Symposium on VLSI Circuits, Kyoto, Japan.

Research output: Contribution to conference › Paper › peer-review

Ohnakado, T, Yamakawa, S, Murakami, T, Furukawa, A, Taniguchi, E, Ueda, HO, Suematsu, N & Oomori, T 2003, '21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs)', Paper presented at 2003 Symposium on VLSI Circuits, Kyoto, Japan, 03/6/12 - 03/6/14 pp. 25-28.

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abstract = "This paper reports for the first time an over-20dBm power-handling 5GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (IL) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode IL (I L@RX) of as low as 1.44dB at 5GHz is accomplished with the benefit of the IL improvement effects in the DET, in addition to a very low transmit-mode IL (IL@TX) of 0.95dB at 5GHz.",

author = "Takahiro Ohnakado and Satoshi Yamakawa and Takaaki Murakami and Akihiko Furukawa and Eiji Taniguchi and Ueda, {Hiro Omi} and Noriharu Suematsu and Tatsuo Oomori",

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AU - Ohnakado, Takahiro

AU - Yamakawa, Satoshi

AU - Murakami, Takaaki

AU - Furukawa, Akihiko

AU - Taniguchi, Eiji

AU - Ueda, Hiro Omi

AU - Suematsu, Noriharu

AU - Oomori, Tatsuo

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N2 - This paper reports for the first time an over-20dBm power-handling 5GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (IL) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode IL (I L@RX) of as low as 1.44dB at 5GHz is accomplished with the benefit of the IL improvement effects in the DET, in addition to a very low transmit-mode IL (IL@TX) of 0.95dB at 5GHz.

AB - This paper reports for the first time an over-20dBm power-handling 5GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (IL) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode IL (I L@RX) of as low as 1.44dB at 5GHz is accomplished with the benefit of the IL improvement effects in the DET, in addition to a very low transmit-mode IL (IL@TX) of 0.95dB at 5GHz.

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21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors (DETs)

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