TY - GEN
T1 - 250°C wafer-level vacuum sealing using electroplated copper bonding frame planarized by fly-cutting
AU - Al Farisi, Muhammad Salman
AU - Tanaka, Koki
AU - Hirano, Hideki
AU - Tanaka, Shuji
N1 - Funding Information:
This study was supported by the Creation of Innovation Centers for Advanced Interdisciplinary Research Areas Program from the Japan Science and Technology Agency, and partially supported by ‘Nanotechnology Platform’ of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan. MSAF acknowledges financial support from Sato Yo International Scholarship Foundation and the Program for Leading Graduate Schools, ‘Inter-Graduate School Doctoral Degree Program on Global Safety’ of the MEXT, Japan.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/26
Y1 - 2017/7/26
N2 - This article reports a wafer-level heterogeneous integration and vacuum packaging technology by thermocompression bonding using electroplated Cu sealing frame planarized by single-point diamond fly-cutting. A high grain boundary density on the Cu surface induced by mechanical stress application during fly-cutting process enables vacuum sealing with bonding temperature as low as 250°C. At such low bonding temperature, a less amount of gases is desorbed, resulting in a sealed cavity pressure lower than 100 Pa. Furthermore, the shear strength higher than 150 MPa using 50 μm width sealing frames is also achieved. The availability of the proposed technology as an integration platform for wafers with several μm structure is also demonstrated.
AB - This article reports a wafer-level heterogeneous integration and vacuum packaging technology by thermocompression bonding using electroplated Cu sealing frame planarized by single-point diamond fly-cutting. A high grain boundary density on the Cu surface induced by mechanical stress application during fly-cutting process enables vacuum sealing with bonding temperature as low as 250°C. At such low bonding temperature, a less amount of gases is desorbed, resulting in a sealed cavity pressure lower than 100 Pa. Furthermore, the shear strength higher than 150 MPa using 50 μm width sealing frames is also achieved. The availability of the proposed technology as an integration platform for wafers with several μm structure is also demonstrated.
KW - Cu-Cu thermo-compression bonding
KW - Electron backscatter diffraction
KW - Heterogeneous integration
KW - Single-point diamond fly-cutting
KW - Thermal desorption spectroscopy
KW - Wafer-level vacuum sealing
KW - Zero-balance method
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U2 - 10.1109/TRANSDUCERS.2017.7994267
DO - 10.1109/TRANSDUCERS.2017.7994267
M3 - Conference contribution
AN - SCOPUS:85029383991
T3 - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
SP - 1191
EP - 1194
BT - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
Y2 - 18 June 2017 through 22 June 2017
ER -