TY - GEN
T1 - 3-Dimensional and damage-free neutral beam etching for MEMS applications
AU - Wada, Akira
AU - Kubota, Tomohiro
AU - Yanagisawa, Yuuki
AU - Altansukh, Batnasan
AU - Samukawa, Seiji
AU - Ono, Tatahito
AU - Miwa, Kazuhiro
PY - 2012
Y1 - 2012
N2 - To fabricate high reliability Micro Electro Mechanical Systems (MEMS) devices, damage-free etching with high aspect three-dimensional (3D) structure is important. Plasma etching resulted in profile anomaly near high aspect 3D structure due to distortion of ion trajectory by distortion of ion sheath and degradation of mechanical property of MEMS devices due to defect generation by UV irradiation, respectively. Conversely, neutral beam was found to be a favorable technique to realize precise and damage-free etching for high aspect ratio and 3D MEMS structure.
AB - To fabricate high reliability Micro Electro Mechanical Systems (MEMS) devices, damage-free etching with high aspect three-dimensional (3D) structure is important. Plasma etching resulted in profile anomaly near high aspect 3D structure due to distortion of ion trajectory by distortion of ion sheath and degradation of mechanical property of MEMS devices due to defect generation by UV irradiation, respectively. Conversely, neutral beam was found to be a favorable technique to realize precise and damage-free etching for high aspect ratio and 3D MEMS structure.
UR - http://www.scopus.com/inward/record.url?scp=84873974001&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873974001&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2012.6411442
DO - 10.1109/ICSENS.2012.6411442
M3 - Conference contribution
AN - SCOPUS:84873974001
SN - 9781457717659
T3 - Proceedings of IEEE Sensors
BT - IEEE SENSORS 2012 - Proceedings
T2 - 11th IEEE SENSORS 2012 Conference
Y2 - 28 October 2012 through 31 October 2012
ER -