30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Engineering

• Electron Optical Lithography 100%
• Fabrication 50%
• Cutoff Frequency 50%
• High Value 50%
• Characteristics 50%
• Substrates 50%
• Electronic Devices 50%

Earth and Planetary Sciences

• Fabrication 50%
• Fullerene 50%
• Report 50%
• Substrate 50%
• Value 50%

Material Science

• Indium Gallium Arsenide 100%
• Nanocomposites 50%
• Devices 50%