TY - JOUR
T1 - 30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency
AU - Suemitsu, Tetsuya
AU - Ishiii, Tetsuyoshi
AU - Yokoyama, Haruki
AU - Enoki, Takatomo
AU - Ishii, Yasunobu
AU - Tamamura, Toshiaki
PY - 1999
Y1 - 1999
N2 - The device characteristics and fabrication of 30-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates are reported. The gate length of 30 nm is achieved for a T-shaped gate geometry, which is necessary to minimize gate resistance for short-gate HEMTs, by using fullerene-incorporated nanocomposite resist in the electron beam direct writing of the bottom of the gate. In addition, the two-step-recess gate technology is used to minimize the extension of effective gate length. The devices provide excellent RF characteristics; a record cutoff frequency of 350 GHz is achieved.
AB - The device characteristics and fabrication of 30-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates are reported. The gate length of 30 nm is achieved for a T-shaped gate geometry, which is necessary to minimize gate resistance for short-gate HEMTs, by using fullerene-incorporated nanocomposite resist in the electron beam direct writing of the bottom of the gate. In addition, the two-step-recess gate technology is used to minimize the extension of effective gate length. The devices provide excellent RF characteristics; a record cutoff frequency of 350 GHz is achieved.
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U2 - 10.1143/JJAP.38.L154
DO - 10.1143/JJAP.38.L154
M3 - Article
AN - SCOPUS:0032680212
SN - 0021-4922
VL - 38
SP - L154-L156
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2 B
ER -