TY - JOUR
T1 - 30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks
AU - Isogami, Shinji
AU - Tsunoda, Masakiyo
AU - Takahashi, Migaku
PY - 2005/10
Y1 - 2005/10
N2 - 30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.
AB - 30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.
KW - Argon ion milling
KW - Chemical-vapor deposition (CVD)
KW - Magnetic tunnel junctions (MTJs)
KW - Scanning-electron microscope (SEM)
UR - http://www.scopus.com/inward/record.url?scp=27744446511&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27744446511&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2005.854786
DO - 10.1109/TMAG.2005.854786
M3 - Article
AN - SCOPUS:27744446511
SN - 0018-9464
VL - 41
SP - 3607
EP - 3609
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 10
ER -