300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

Yukio Suzuki; Hideyuki Fukushi; Masanori Muroyama; Yoshiyuki Hata; Takahiro Nakayama; Rakesh Chand; Hideki Hirano; Yutaka Nonomura; Hirofumi Funabashi; Shuji Tanaka

doi:10.1109/MEMSYS.2017.7863515

300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

Yukio Suzuki, Hideyuki Fukushi, Masanori Muroyama, Yoshiyuki Hata, Takahiro Nakayama, Rakesh Chand, Hideki Hirano, Yutaka Nonomura, Hirofumi Funabashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Citations (Scopus)

Abstract

This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.

Original language	English
Title of host publication	2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	744-748
Number of pages	5
ISBN (Electronic)	9781509050789
DOIs	https://doi.org/10.1109/MEMSYS.2017.7863515
Publication status	Published - 2017 Feb 23
Event	30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States Duration: 2017 Jan 22 → 2017 Jan 26

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
Country/Territory	United States
City	Las Vegas
Period	17/1/22 → 17/1/26

Access to Document

10.1109/MEMSYS.2017.7863515

Cite this

Suzuki, Y., Fukushi, H., Muroyama, M., Hata, Y., Nakayama, T., Chand, R., Hirano, H., Nonomura, Y., Funabashi, H., & Tanaka, S. (2017). 300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS. In 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017 (pp. 744-748). Article 7863515 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2017.7863515

Suzuki, Yukio ; Fukushi, Hideyuki ; Muroyama, Masanori et al. / 300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS. 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 744-748 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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title = "300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS",

abstract = "This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.",

author = "Yukio Suzuki and Hideyuki Fukushi and Masanori Muroyama and Yoshiyuki Hata and Takahiro Nakayama and Rakesh Chand and Hideki Hirano and Yutaka Nonomura and Hirofumi Funabashi and Shuji Tanaka",

note = "Funding Information: This study was mainly supported by {"}Formation of Innovation Center for Fusion of Advanced Technologies{"} program under Japan Science and Technology Agency (JST). The facility used in this study was partly supported by {"}Nanotechnology Platform{"} program under the Ministry of Education, Culture, Sports, Science and Technology, Japan. Publisher Copyright: {\textcopyright} 2017 IEEE.; 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 ; Conference date: 22-01-2017 Through 26-01-2017",

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doi = "10.1109/MEMSYS.2017.7863515",

language = "English",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

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Suzuki, Y, Fukushi, H, Muroyama, M, Hata, Y, Nakayama, T, Chand, R, Hirano, H, Nonomura, Y, Funabashi, H & Tanaka, S 2017, 300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS. in 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017., 7863515, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Institute of Electrical and Electronics Engineers Inc., pp. 744-748, 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017, Las Vegas, United States, 17/1/22. https://doi.org/10.1109/MEMSYS.2017.7863515

300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS. / Suzuki, Yukio; Fukushi, Hideyuki; Muroyama, Masanori et al.
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 744-748 7863515 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

AU - Suzuki, Yukio

AU - Fukushi, Hideyuki

AU - Muroyama, Masanori

AU - Hata, Yoshiyuki

AU - Nakayama, Takahiro

AU - Chand, Rakesh

AU - Hirano, Hideki

AU - Nonomura, Yutaka

AU - Funabashi, Hirofumi

AU - Tanaka, Shuji

N1 - Funding Information: This study was mainly supported by "Formation of Innovation Center for Fusion of Advanced Technologies" program under Japan Science and Technology Agency (JST). The facility used in this study was partly supported by "Nanotechnology Platform" program under the Ministry of Education, Culture, Sports, Science and Technology, Japan. Publisher Copyright: © 2017 IEEE.

PY - 2017/2/23

Y1 - 2017/2/23

N2 - This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.

AB - This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.

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DO - 10.1109/MEMSYS.2017.7863515

M3 - Conference contribution

AN - SCOPUS:85015793344

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 744

EP - 748

BT - 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017

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ER -

Suzuki Y, Fukushi H, Muroyama M, Hata Y, Nakayama T, Chand R et al. 300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS. In 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 744-748. 7863515. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2017.7863515

300 μm Deep through silicon via in laser-ablated CMOS multi-project wafer for cost-effective development of integrated MEMS

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