This study has opened a possibility to fabricate through silicon vias (TSV) in a LSI wafer available by commercial multi-project wafer (MPW) service and integrate the LSI and MEMS by wafer bonding. 300 μm deep Cu annular type TSV were fabricated in a TSMC 0.18 μm CMOS LSI MPW cut into 4″ diameter. The developed TSV process managed mechanically fragile property of the laser-ablated MPW by low stress TEOS PECVD SiO2 backfilling, surface planarization, temporally wafer support etc. The LSI and MEMS were integrated by Au-Au thermocompression bonding at 300°C, and the completed device worked via the TSV as designed. 'Tohoku TSV CMOS-MEMS platform' presented in this paper gives many chances for cost-effective development of surface-mountable CMOS-integrated MEMS.
|Title of host publication
|2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - 2017 Feb 23
|30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
Duration: 2017 Jan 22 → 2017 Jan 26
|Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
|30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
|17/1/22 → 17/1/26