32Gbit/s super-dynamic decision IC using 0.13μm GaAs MESFETs with multilayer-interconnection structure

T. Otsuji; K. Murata; M. Tokumitsu; S. Sugitani

doi:10.1049/el:19970323

32Gbit/s super-dynamic decision IC using 0.13μm GaAs MESFETs with multilayer-interconnection structure

T. Otsuji, K. Murata, M. Tokumitsu, S. Sugitani

RIEC - Information Communication Platforms Division

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The authors report on a super-dynamic decision IC using 0.13μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32Gbit/s decision operation was achieved.

Original language	English
Pages (from-to)	480-482
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	6
DOIs	https://doi.org/10.1049/el:19970323
Publication status	Published - 1997 Mar 13

Keywords

Decision circuits
Integrated circuits
Optical communication equipment

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10.1049/el:19970323

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title = "32Gbit/s super-dynamic decision IC using 0.13μm GaAs MESFETs with multilayer-interconnection structure",

abstract = "The authors report on a super-dynamic decision IC using 0.13μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32Gbit/s decision operation was achieved.",

keywords = "Decision circuits, Integrated circuits, Optical communication equipment",

author = "T. Otsuji and K. Murata and M. Tokumitsu and S. Sugitani",

year = "1997",

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doi = "10.1049/el:19970323",

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T1 - 32Gbit/s super-dynamic decision IC using 0.13μm GaAs MESFETs with multilayer-interconnection structure

AU - Otsuji, T.

AU - Murata, K.

AU - Tokumitsu, M.

AU - Sugitani, S.

PY - 1997/3/13

Y1 - 1997/3/13

N2 - The authors report on a super-dynamic decision IC using 0.13μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32Gbit/s decision operation was achieved.

AB - The authors report on a super-dynamic decision IC using 0.13μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32Gbit/s decision operation was achieved.

KW - Decision circuits

KW - Integrated circuits

KW - Optical communication equipment

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DO - 10.1049/el:19970323

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JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

32Gbit/s super-dynamic decision IC using 0.13μm GaAs MESFETs with multilayer-interconnection structure

Abstract

Keywords

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