TY - GEN
T1 - 3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS)
AU - Lee, K. W.
AU - Noriki, A.
AU - Kiyoyama, K.
AU - Kanno, S.
AU - Kobayashi, R.
AU - Jeong, W. C.
AU - Bea, J. C.
AU - Fukushima, T.
AU - Tanaka, T.
AU - Koyanagi, M.
PY - 2009
Y1 - 2009
N2 - We proposed 3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS). In order to realize 3D opto-electronic integrated system-on-silicon (SOS), we developed novel heterogeneous integration technology of LSI, MEMS and optoelectronic devices by implementing 3D heterogeneous opto-electronic multi-chip module composed with LSI, passives, MEMS and optoelectronic devices. The electrical interposer mounted with amplitude shift keying (ASK) LSI, LC filter and pressure-sensing MEMS chips and the optical interposer embedded with vertical-cavity surface-emitting laser (VCSEL) and photodiode (PD) chips are precisely bonded to form 3D opto-electronic multi-chip module. Opto-electronic devices are electrically connected via through-silicon vias (TSVs) which were formed into the interposers. Microfluidic channels are formed into the interposer by wafer direct bonding technique. 3D heterogeneous opto-electronic multi-chip module is successfully implemented for the first time.
AB - We proposed 3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS). In order to realize 3D opto-electronic integrated system-on-silicon (SOS), we developed novel heterogeneous integration technology of LSI, MEMS and optoelectronic devices by implementing 3D heterogeneous opto-electronic multi-chip module composed with LSI, passives, MEMS and optoelectronic devices. The electrical interposer mounted with amplitude shift keying (ASK) LSI, LC filter and pressure-sensing MEMS chips and the optical interposer embedded with vertical-cavity surface-emitting laser (VCSEL) and photodiode (PD) chips are precisely bonded to form 3D opto-electronic multi-chip module. Opto-electronic devices are electrically connected via through-silicon vias (TSVs) which were formed into the interposers. Microfluidic channels are formed into the interposer by wafer direct bonding technique. 3D heterogeneous opto-electronic multi-chip module is successfully implemented for the first time.
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U2 - 10.1109/IEDM.2009.5424305
DO - 10.1109/IEDM.2009.5424305
M3 - Conference contribution
AN - SCOPUS:77952386756
SN - 9781424456406
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 22.2.1-22.2.4
BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
T2 - 2009 International Electron Devices Meeting, IEDM 2009
Y2 - 7 December 2009 through 9 December 2009
ER -