3D integration of memories including heterogeneous integration

Tetsuo Endoh

doi:10.1109/VLSI-TSA51926.2021.9440129

3D integration of memories including heterogeneous integration

Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this invited paper, 3D integration technology of memories including heterogeneous integration is overviewed. Especially, in 3D integration of memory part, 3D NAND/NOR memory, 3D crosspoint memory with ReRAM and PCM, and 3D STT-MRAM are discussed for realizing high density and so on. Moreover, heterogeneous integration is shown from view point of multifunctional capability.

Original language	English
Title of host publication	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665419345
DOIs	https://doi.org/10.1109/VLSI-TSA51926.2021.9440129
Publication status	Published - 2021 Apr 19
Event	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan, Province of China Duration: 2021 Apr 19 → 2021 Apr 22

Publication series

Name	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	21/4/19 → 21/4/22

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Control and Optimization

Access to Document

10.1109/VLSI-TSA51926.2021.9440129

Cite this

Endoh, T. (2021). 3D integration of memories including heterogeneous integration. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings [9440129] (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440129

3D integration of memories including heterogeneous integration. / Endoh, Tetsuo.

VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440129 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endoh, T 2021, 3D integration of memories including heterogeneous integration. in VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440129, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, Taiwan, Province of China, 21/4/19. https://doi.org/10.1109/VLSI-TSA51926.2021.9440129

Endoh T. 3D integration of memories including heterogeneous integration. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440129. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440129

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title = "3D integration of memories including heterogeneous integration",

abstract = "In this invited paper, 3D integration technology of memories including heterogeneous integration is overviewed. Especially, in 3D integration of memory part, 3D NAND/NOR memory, 3D crosspoint memory with ReRAM and PCM, and 3D STT-MRAM are discussed for realizing high density and so on. Moreover, heterogeneous integration is shown from view point of multifunctional capability. ",

author = "Tetsuo Endoh",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

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AB - In this invited paper, 3D integration technology of memories including heterogeneous integration is overviewed. Especially, in 3D integration of memory part, 3D NAND/NOR memory, 3D crosspoint memory with ReRAM and PCM, and 3D STT-MRAM are discussed for realizing high density and so on. Moreover, heterogeneous integration is shown from view point of multifunctional capability.

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

3D integration of memories including heterogeneous integration

Abstract

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ASJC Scopus subject areas

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