3D Integration technologies using self-assembly and electrostatic temporary multichip bonding

T. Fukushima; H. Hashiguchi; J. Bea; M. Murugesan; K. W. Lee; T. Tanaka; M. Koyanagi

doi:10.1109/ECTC.2013.6575550

3D Integration technologies using self-assembly and electrostatic temporary multichip bonding

T. Fukushima, H. Hashiguchi, J. Bea, M. Murugesan, K. W. Lee, T. Tanaka, M. Koyanagi

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

We developed a new chip-to-wafer 3D integration technology using self-assembly and electrostatic (SAE) bonding. High-throughput multichip self-assembly with a high alignment accuracy within 1 μm was achieved by the SAE bonding technique. Self-assembled known good dies (KGDs) were temporarily bonded on SAE carriers by electrostatic bonding force. We implemented multichip transfer processes twice and then formed through-silicon vias (TSVs) for the self-assembled KGDs to fabricate 3D-stacked chips with Cu-TSVs and Cu/SnAg microbumps. By using the new multichip-to-wafer 3D integration process with SAE bonding, we obtained good electrical characteristics from the self-assembled KGDs having Cu-TSVs and Cu/SnAg microbumps.

Original language	English
Title of host publication	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Pages	58-63
Number of pages	6
DOIs	https://doi.org/10.1109/ECTC.2013.6575550
Publication status	Published - 2013
Event	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States Duration: 2013 May 28 → 2013 May 31

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Country/Territory	United States
City	Las Vegas, NV
Period	13/5/28 → 13/5/31

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10.1109/ECTC.2013.6575550

Cite this

Fukushima, T., Hashiguchi, H., Bea, J., Murugesan, M., Lee, K. W., Tanaka, T., & Koyanagi, M. (2013). 3D Integration technologies using self-assembly and electrostatic temporary multichip bonding. In 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 (pp. 58-63). Article 6575550 (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2013.6575550

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title = "3D Integration technologies using self-assembly and electrostatic temporary multichip bonding",

abstract = "We developed a new chip-to-wafer 3D integration technology using self-assembly and electrostatic (SAE) bonding. High-throughput multichip self-assembly with a high alignment accuracy within 1 μm was achieved by the SAE bonding technique. Self-assembled known good dies (KGDs) were temporarily bonded on SAE carriers by electrostatic bonding force. We implemented multichip transfer processes twice and then formed through-silicon vias (TSVs) for the self-assembled KGDs to fabricate 3D-stacked chips with Cu-TSVs and Cu/SnAg microbumps. By using the new multichip-to-wafer 3D integration process with SAE bonding, we obtained good electrical characteristics from the self-assembled KGDs having Cu-TSVs and Cu/SnAg microbumps.",

author = "T. Fukushima and H. Hashiguchi and J. Bea and M. Murugesan and Lee, {K. W.} and T. Tanaka and M. Koyanagi",

year = "2013",

doi = "10.1109/ECTC.2013.6575550",

language = "English",

isbn = "9781479902330",

series = "Proceedings - Electronic Components and Technology Conference",

pages = "58--63",

booktitle = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013",

note = "2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 ; Conference date: 28-05-2013 Through 31-05-2013",

}

Fukushima, T, Hashiguchi, H, Bea, J, Murugesan, M, Lee, KW, Tanaka, T & Koyanagi, M 2013, 3D Integration technologies using self-assembly and electrostatic temporary multichip bonding. in 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013., 6575550, Proceedings - Electronic Components and Technology Conference, pp. 58-63, 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013, Las Vegas, NV, United States, 13/5/28. https://doi.org/10.1109/ECTC.2013.6575550

3D Integration technologies using self-assembly and electrostatic temporary multichip bonding. / Fukushima, T.; Hashiguchi, H.; Bea, J. et al.
2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. 2013. p. 58-63 6575550 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Fukushima, T.

AU - Hashiguchi, H.

AU - Bea, J.

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AU - Lee, K. W.

AU - Tanaka, T.

AU - Koyanagi, M.

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N2 - We developed a new chip-to-wafer 3D integration technology using self-assembly and electrostatic (SAE) bonding. High-throughput multichip self-assembly with a high alignment accuracy within 1 μm was achieved by the SAE bonding technique. Self-assembled known good dies (KGDs) were temporarily bonded on SAE carriers by electrostatic bonding force. We implemented multichip transfer processes twice and then formed through-silicon vias (TSVs) for the self-assembled KGDs to fabricate 3D-stacked chips with Cu-TSVs and Cu/SnAg microbumps. By using the new multichip-to-wafer 3D integration process with SAE bonding, we obtained good electrical characteristics from the self-assembled KGDs having Cu-TSVs and Cu/SnAg microbumps.

AB - We developed a new chip-to-wafer 3D integration technology using self-assembly and electrostatic (SAE) bonding. High-throughput multichip self-assembly with a high alignment accuracy within 1 μm was achieved by the SAE bonding technique. Self-assembled known good dies (KGDs) were temporarily bonded on SAE carriers by electrostatic bonding force. We implemented multichip transfer processes twice and then formed through-silicon vias (TSVs) for the self-assembled KGDs to fabricate 3D-stacked chips with Cu-TSVs and Cu/SnAg microbumps. By using the new multichip-to-wafer 3D integration process with SAE bonding, we obtained good electrical characteristics from the self-assembled KGDs having Cu-TSVs and Cu/SnAg microbumps.

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ER -

3D Integration technologies using self-assembly and electrostatic temporary multichip bonding

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