3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

X. J. Chen; S. Nakano; K. Kakimoto

doi:10.1016/j.jcrysgro.2010.10.067

3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

X. J. Chen, S. Nakano, K. Kakimoto

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

Original language	English
Pages (from-to)	259-264
Number of pages	6
Journal	Journal of Crystal Growth
Volume	318
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.067
Publication status	Published - 2011 Mar 1
Externally published	Yes

Keywords

A1. Computer simulation
A1. Defects
A1. Solidification
A1. Stresses

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.10.067

Cite this

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title = "3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells",

abstract = "We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.",

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author = "Chen, {X. J.} and S. Nakano and K. Kakimoto",

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AU - Chen, X. J.

AU - Nakano, S.

AU - Kakimoto, K.

N1 - Funding Information: This work was supported by Program for New Century Excellent Talents in University ( NCET-09-0634 ) and the Fundamental Research Funds for the Central Universities of China .

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N2 - We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

AB - We carried out calculations to investigate the influence of thermal conductivity of the wall of a crucible on thermal stress and dislocations in a silicon ingot during a solidification process using a three-dimensional global analysis. It was found that the mc interface shape and the temperature gradient in a silicon ingot have significant influence on thermal stress and dislocations due to different thermal conductivity of the wall of a crucible. Therefore, we should control not only the mc interface shape, but also temperature gradient in a silicon ingot in order to reduce thermal stress and dislocations in a silicon ingot during a solidification process.

KW - A1. Computer simulation

KW - A1. Defects

KW - A1. Solidification

KW - A1. Stresses

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3D numerical analysis of the influence of material property of a crucible on stress and dislocation in multicrystalline silicon for solar cells

Abstract

Keywords

ASJC Scopus subject areas

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