TY - JOUR
T1 - 3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon
AU - Han, Xue Feng
AU - Liu, Xin
AU - Nakano, Satoshi
AU - Harada, Hirofumi
AU - Miyamura, Yoshiji
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI), Japan.
Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2018/2/1
Y1 - 2018/2/1
N2 - In FZ growth processes, the stability of the free surface is important in the production of single crystal silicon with high quality. To investigate the shape of the free surface in the FZ silicon crystal growth, a 3D numerical model that included gas and liquid phases was developed. In this present study, 3D Young-Laplacian equations have been solved using the Volume of Fluid (VOF) Model. Using this new model, we predicted the 3D shape of the free surface in FZ silicon crystal growth. The effect of magnetic pressure on shape of free surface has been considered. In particular, the free surface of the eccentric growth model, which could not be previously solved using the 2D Young-Laplacian equations, was solved using the VOF model. The calculation results are validated by the experimental results.
AB - In FZ growth processes, the stability of the free surface is important in the production of single crystal silicon with high quality. To investigate the shape of the free surface in the FZ silicon crystal growth, a 3D numerical model that included gas and liquid phases was developed. In this present study, 3D Young-Laplacian equations have been solved using the Volume of Fluid (VOF) Model. Using this new model, we predicted the 3D shape of the free surface in FZ silicon crystal growth. The effect of magnetic pressure on shape of free surface has been considered. In particular, the free surface of the eccentric growth model, which could not be previously solved using the 2D Young-Laplacian equations, was solved using the VOF model. The calculation results are validated by the experimental results.
KW - A1. Computer simulation
KW - A1. Fluid flows
KW - A2. Floating zone technique
KW - B2. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2017.12.012
DO - 10.1016/j.jcrysgro.2017.12.012
M3 - Article
AN - SCOPUS:85039153469
SN - 0022-0248
VL - 483
SP - 269
EP - 274
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -