TY - JOUR
T1 - 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth
AU - Han, Xue Feng
AU - Liu, Xin
AU - Nakano, Satoshi
AU - Harada, Hirofumi
AU - Miyamura, Yoshiji
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade and Industry, Japan.
Publisher Copyright:
© 2019
PY - 2020/2/15
Y1 - 2020/2/15
N2 - In this paper, we propose a three-dimensional model for a 200 mm floating zone silicon crystal growth process to investigate the fluid flow and solid–liquid interface. To study the effect of high-frequency (HF) electromagnetic (EM) heating on the melt flow and interface shape, HF-EM and heat transfer calculations were conducted in three dimensions. Through comparison of EM and Marangoni forces, EM force was found to have a larger effect than Marangoni force on the free surface flow. By considering 3D Marangoni and EM forces at the free surface, a more accurate melt flow distribution has been obtained. Moreover, the results showed that local growth rate became more inhomogeneous when the rotation speed of the crystal was increased. However, a more homogeneous three-phase line could be obtained with a high rotational crystal speed.
AB - In this paper, we propose a three-dimensional model for a 200 mm floating zone silicon crystal growth process to investigate the fluid flow and solid–liquid interface. To study the effect of high-frequency (HF) electromagnetic (EM) heating on the melt flow and interface shape, HF-EM and heat transfer calculations were conducted in three dimensions. Through comparison of EM and Marangoni forces, EM force was found to have a larger effect than Marangoni force on the free surface flow. By considering 3D Marangoni and EM forces at the free surface, a more accurate melt flow distribution has been obtained. Moreover, the results showed that local growth rate became more inhomogeneous when the rotation speed of the crystal was increased. However, a more homogeneous three-phase line could be obtained with a high rotational crystal speed.
KW - A1. Computer simulation
KW - A1. Fluid flows
KW - A2. Floating zone technique
KW - B2. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2019.125403
DO - 10.1016/j.jcrysgro.2019.125403
M3 - Article
AN - SCOPUS:85076262788
SN - 0022-0248
VL - 532
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125403
ER -