3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

M. Kodzuka, T. Ohkubo, K. Hono, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)


The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters.

Original languageEnglish
Pages (from-to)644-648
Number of pages5
Issue number5
Publication statusPublished - 2009 Apr 1


  • (Ga,Mn)As
  • Atom probe
  • DMS
  • Diluted magnetic semiconductor
  • FIB
  • SEM
  • Specimen preparation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation


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