3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

M. Kodzuka; T. Ohkubo; K. Hono; Fumihiro Matsukura; Hideo Ohno

doi:10.1016/j.ultramic.2008.11.011

3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

M. Kodzuka, T. Ohkubo, K. Hono, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The distribution of Mn in a Ga_0.963Mn_0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga_0.963Mn_0.037As are uniformly dissolved without forming any nanometer-sized clusters.

Original language	English
Pages (from-to)	644-648
Number of pages	5
Journal	Ultramicroscopy
Volume	109
Issue number	5
DOIs	https://doi.org/10.1016/j.ultramic.2008.11.011
Publication status	Published - 2009 Apr 1

Keywords

(Ga,Mn)As
Atom probe
DMS
Diluted magnetic semiconductor
FIB
SEM
Specimen preparation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/j.ultramic.2008.11.011

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title = "3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film",

abstract = "The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters.",

keywords = "(Ga,Mn)As, Atom probe, DMS, Diluted magnetic semiconductor, FIB, SEM, Specimen preparation",

author = "M. Kodzuka and T. Ohkubo and K. Hono and Fumihiro Matsukura and Hideo Ohno",

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TY - JOUR

T1 - 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

AU - Kodzuka, M.

AU - Ohkubo, T.

AU - Hono, K.

AU - Matsukura, Fumihiro

AU - Ohno, Hideo

PY - 2009/4/1

Y1 - 2009/4/1

N2 - The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters.

AB - The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters.

KW - (Ga,Mn)As

KW - Atom probe

KW - DMS

KW - Diluted magnetic semiconductor

KW - FIB

KW - SEM

KW - Specimen preparation

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DO - 10.1016/j.ultramic.2008.11.011

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AN - SCOPUS:62549136941

SN - 0304-3991

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EP - 648

JO - Ultramicroscopy

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ER -

3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

Abstract

Keywords

ASJC Scopus subject areas

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