40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

K. Yoshino; K. Wakita; I. Kotaka; S. Kondo; Y. Noguchi; S. Kuwano; N. Takachio; T. Otsuji; Y. Imai; T. Enoki

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

K. Yoshino, K. Wakita, I. Kotaka, S. Kondo, Y. Noguchi, S. Kuwano, N. Takachio, T. Otsuji, Y. Imai, T. Enoki

RIEC - Information Communication Platforms Division

Nippon Telegraph & Telephone

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V_pp.

Original language	English
Pages	3.203-3.206
Publication status	Published - 1996
Event	Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6) - Oslo, Norway Duration: 1996 Sept 15 → 1996 Sept 19

Conference

Conference	Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6)
City	Oslo, Norway
Period	96/9/15 → 96/9/19

Cite this

Yoshino, K., Wakita, K., Kotaka, I., Kondo, S., Noguchi, Y., Kuwano, S., Takachio, N., Otsuji, T., Imai, Y., & Enoki, T. (1996). 40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage. 3.203-3.206. Paper presented at Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6), Oslo, Norway.

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title = "40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage",

abstract = "40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.",

author = "K. Yoshino and K. Wakita and I. Kotaka and S. Kondo and Y. Noguchi and S. Kuwano and N. Takachio and T. Otsuji and Y. Imai and T. Enoki",

year = "1996",

language = "English",

pages = "3.203--3.206",

note = "Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6) ; Conference date: 15-09-1996 Through 19-09-1996",

}

Yoshino, K, Wakita, K, Kotaka, I, Kondo, S, Noguchi, Y, Kuwano, S, Takachio, N, Otsuji, T, Imai, Y & Enoki, T 1996, '40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage', Paper presented at Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6), Oslo, Norway, 96/9/15 - 96/9/19 pp. 3.203-3.206.

TY - CONF

T1 - 40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

AU - Yoshino, K.

AU - Wakita, K.

AU - Kotaka, I.

AU - Kondo, S.

AU - Noguchi, Y.

AU - Kuwano, S.

AU - Takachio, N.

AU - Otsuji, T.

AU - Imai, Y.

AU - Enoki, T.

PY - 1996

Y1 - 1996

N2 - 40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.

AB - 40-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/InAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 Vpp.

UR - http://www.scopus.com/inward/record.url?scp=0030316004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030316004&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030316004

SP - 3.203-3.206

T2 - Proceedings of the 1996 22nd European Conference on Optical Communication, ECOC. Part 5 (of 6)

Y2 - 15 September 1996 through 19 September 1996

ER -

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

Abstract

Conference

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