40-Gb/s IC and packaging technologies for future lightwave communications

Yuhki Imai, Taiichi Otsuji, Eiichi Sano, Yohtaro Umeda

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

This paper reviews recent advances made at our laboratories in device, circuit-design, and module-design technologies for future very-high-speed lightwave communications. ICs and modules developed using 0.1 micrometer gate-length InAlAs/InGaAs HEMTs demonstrate promising performance suited to 40-Gb/s applications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages186-197
Number of pages12
ISBN (Print)0819424498
Publication statusPublished - 1997
EventHigh-Speed Semiconductor Lasers for Communication - San Jose, CA, USA
Duration: 1997 Feb 101997 Feb 11

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3038
ISSN (Print)0277-786X

Conference

ConferenceHigh-Speed Semiconductor Lasers for Communication
CitySan Jose, CA, USA
Period97/2/1097/2/11

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