Abstract
This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future light*-wave communications systems. A 0.1-μm gate InAlAs/InGa-As high electron mobility transistors (HEMT's) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated IC's demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 40 Gb/s.
Original language | English |
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Pages (from-to) | 1363-1369 |
Number of pages | 7 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 32 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1997 Sept |
Keywords
- Demultiplexing
- Distributed amplifiers
- Flip-flops
- MODFET integrated circuits
- Multiplexing
- Optical fiber communication