A 4.5-kV 3000-A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a pin junction structure, and optimization of the anode shorting and the n+ buffer concentration. The electrical characteristics of the device, which achieves 4.5-kV blocking voltage, 3000-A turn-off current, and low switching loss, are reported.
|Number of pages
|PESC Record - IEEE Annual Power Electronics Specialists Conference
|Published - 1988