A 4.5kV-2000A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch- Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn-off capability of 4500A (@ VCC=2600V, Tj=125°C) and the short circuit capability of over 15μs (@ VCC=3000V, Tj=125°C) are successfully achieved.
|Number of pages||4|
|Publication status||Published - 2000|
|Event||12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France|
Duration: 2000 May 22 → 2000 May 25
|Conference||12th International Symposium on Power Semiconductor Devices and ICs|
|Period||00/5/22 → 00/5/25|