4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

T. Fujii; K. Yoshikawa; T. Koga; A. Nishiura; Y. Takahashi; H. Kakiki; M. Ichijyou; Y. Seki

4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

T. Fujii, K. Yoshikawa, T. Koga, A. Nishiura, Y. Takahashi, H. Kakiki, M. Ichijyou, Y. Seki

Center for Innovative Integrated Electronic Systems (CIES)

Fuji Electric Co., Ltd.

Research output: Contribution to conference › Paper › peer-review

22 Citations (Scopus)

Abstract

A 4.5kV-2000A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch- Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn-off capability of 4500A (@ V_CC=2600V, T_j=125°C) and the short circuit capability of over 15μs (@ V_CC=3000V, T_j=125°C) are successfully achieved.

Original language	English
Pages	33-36
Number of pages	4
Publication status	Published - 2000
Event	12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France Duration: 2000 May 22 → 2000 May 25

Conference

Conference	12th International Symposium on Power Semiconductor Devices and ICs
Country/Territory	France
City	Toulouse
Period	00/5/22 → 00/5/25

Cite this

@conference{ec5bc63fc3ff4dd5b7a111f394f1d51a,

title = "4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)",

abstract = "A 4.5kV-2000A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch- Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn-off capability of 4500A (@ VCC=2600V, Tj=125°C) and the short circuit capability of over 15μs (@ VCC=3000V, Tj=125°C) are successfully achieved.",

author = "T. Fujii and K. Yoshikawa and T. Koga and A. Nishiura and Y. Takahashi and H. Kakiki and M. Ichijyou and Y. Seki",

year = "2000",

language = "English",

pages = "33--36",

note = "12th International Symposium on Power Semiconductor Devices and ICs ; Conference date: 22-05-2000 Through 25-05-2000",

}

TY - CONF

T1 - 4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

AU - Fujii, T.

AU - Yoshikawa, K.

AU - Koga, T.

AU - Nishiura, A.

AU - Takahashi, Y.

AU - Kakiki, H.

AU - Ichijyou, M.

AU - Seki, Y.

PY - 2000

Y1 - 2000

N2 - A 4.5kV-2000A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch- Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn-off capability of 4500A (@ VCC=2600V, Tj=125°C) and the short circuit capability of over 15μs (@ VCC=3000V, Tj=125°C) are successfully achieved.

AB - A 4.5kV-2000A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch- Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn-off capability of 4500A (@ VCC=2600V, Tj=125°C) and the short circuit capability of over 15μs (@ VCC=3000V, Tj=125°C) are successfully achieved.

UR - http://www.scopus.com/inward/record.url?scp=0034448280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034448280&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034448280

SP - 33

EP - 36

T2 - 12th International Symposium on Power Semiconductor Devices and ICs

Y2 - 22 May 2000 through 25 May 2000

ER -

4.5kV-2000A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

Abstract

Conference

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