4f-derived fermi surfaces of CeRu2(Si1-xGex)2 near the quantum critical point: Resonant soft-X-ray ARPES study

T. Okane, T. Ohkochi, Y. Takeda, S. I. Fujimori, A. Yasui, Y. Saitoh, H. Yamagami, A. Fujimori, Y. Matsumoto, M. Sugi, N. Kimura, T. Komatsubara, H. Aoki

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Abstract

Angle-resolved photoelectron spectroscopy in the Ce 3d→4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18) 2, and LaRu2Si2 to investigate the changes of the 4f electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4f electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si1-xGex)2.

Original languageEnglish
Article number216401
JournalPhysical Review Letters
Volume102
Issue number21
DOIs
Publication statusPublished - 2009 May 26

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