@inproceedings{98808180a7b04b66849afc30f804824a,
title = "5 GHz band low phase noise Si-CMOS oscillator with flip-chip mounted FBAR",
abstract = "Low phase noise 5 GHz oscillator is designed with 90 nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. FBAR was mounted by using stud bump bonding instead of wire bonding to reduce parasitic inductance. This FBAR oscillator has phase noise of lower than -108dBc/Hz at 100 kHz offset.",
keywords = "5 GHz, 90 nm silicon complementary metal oxide semiconductor (Si-CMOS), film bulk acoustic resonator (FBAR), low phase noise, oscillator",
author = "Ta, {Tuan Thanh} and Kei Ando and Shoichi Tanifuji and Suguru Kameda and Noriharu Suematsu and Tadashi Takagi and Kazuo Tsubouchi",
year = "2010",
language = "English",
isbn = "9784902339222",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "1039--1042",
booktitle = "2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010",
note = "2010 Asia-Pacific Microwave Conference, APMC 2010 ; Conference date: 07-12-2010 Through 10-12-2010",
}