TY - GEN
T1 - 50% Efficiency intermediate band solar cell design using highly periodical silicon nanodisk array
AU - Hu, Weiguo
AU - Igarashi, Makoto
AU - Lee, Ming Yi
AU - Li, Yiming
AU - Samukawa, Seiji
PY - 2012
Y1 - 2012
N2 - A high-quality Si nanodisk superlattice is fabricated by our top-down process. For the first time, a 3D finite element method (FEM) is developed to calculate energy band structure, optical and electrical properties, as well as the intermediate band solar cell (IBSC) operation for the realistic structure. Both the experiments and simulations reveal that miniband formation enhances the optical and electrical collections. Consequently, detailed electronic structure and conversion efficiency are examined to guide optimal design of minibands. A theoretically predicted maximal efficiency of the explored Si nanodisk superlattice is 50.3%, which is promising, compared with well-known complicated Si tandem solar cells.
AB - A high-quality Si nanodisk superlattice is fabricated by our top-down process. For the first time, a 3D finite element method (FEM) is developed to calculate energy band structure, optical and electrical properties, as well as the intermediate band solar cell (IBSC) operation for the realistic structure. Both the experiments and simulations reveal that miniband formation enhances the optical and electrical collections. Consequently, detailed electronic structure and conversion efficiency are examined to guide optimal design of minibands. A theoretically predicted maximal efficiency of the explored Si nanodisk superlattice is 50.3%, which is promising, compared with well-known complicated Si tandem solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84876142849&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876142849&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2012.6478987
DO - 10.1109/IEDM.2012.6478987
M3 - Conference contribution
AN - SCOPUS:84876142849
SN - 9781467348706
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 6.1.1-6.1.4
BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012
T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012
Y2 - 10 December 2012 through 13 December 2012
ER -