Abstract
A 6-kV, 5.5-kA light-triggered thyristor has been developed for BTB (back-to-back) converter systems. A double-diffused p emitter structure was used to improve the trade-off relationship between on-state voltage and blocking capability, and a high-injection low-lifetime structure was used to improve the trade-off relationship between on-state voltage and reverse recovery charge. The double-diffused p emitter consists of a thin p+ emitter in the main area and a thick p- emitter there and elsewhere. High injection was achieved by increasing the p+ emitter concentration and decreasing the p- emitter thickness. A locally controlled lifetime profile was used to compensate for the high injection efficiency. These structures decreased the on-state voltage by about 0.15 V.
| Original language | English |
|---|---|
| Pages | 73-76 |
| Number of pages | 4 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD - Weimer, Ger Duration: 1997 May 26 → 1997 May 29 |
Conference
| Conference | Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD |
|---|---|
| City | Weimer, Ger |
| Period | 97/5/26 → 97/5/29 |