We report on an 80-Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double-layer interconnection process with a low-permittivity insulator. The record operating data rate was measured on a 3-inch wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time.
|Publication status||Published - 1997|
|Event||Proceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Anaheim, CA, USA|
Duration: 1997 Oct 12 → 1997 Oct 15
|Conference||Proceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium|
|City||Anaheim, CA, USA|
|Period||97/10/12 → 97/10/15|