Abstract
We report on an 80-Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double-layer interconnection process with a low-permittivity insulator. The record operating data rate was measured on a 3-inch wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time.
| Original language | English |
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| Pages | [d]183-186 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Anaheim, CA, USA Duration: 1997 Oct 12 → 1997 Oct 15 |
Conference
| Conference | Proceedings of the 1997 19th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
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| City | Anaheim, CA, USA |
| Period | 97/10/12 → 97/10/15 |