80-Gb/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure

Nobuhiro Kikuchi; Yasuo Shibata; Ken Tsuzuki; Hiroaki Sanjoh; Tomonari Sato; Eiichi Yamada; Tadao Ishibashi; Hiroshi Yasaka

doi:10.1109/LPT.2009.2018475

80-Gb/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure

Nobuhiro Kikuchi, Yasuo Shibata, Ken Tsuzuki, Hiroaki Sanjoh, Tomonari Sato, Eiichi Yamada, Tadao Ishibashi, Hiroshi Yasaka

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 V_pp in a push-pull configuration. The chip size is just 7.5 mm × 1.3 mm.

Original language	English
Pages (from-to)	787-789
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2009.2018475
Publication status	Published - 2009 Jun 15
Externally published	Yes

Keywords

Optical modulation
Quadrature phase-shift keying
Semiconductor waveguides
Traveling wave devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2009.2018475

Cite this

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abstract = "We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 Vpp in a push-pull configuration. The chip size is just 7.5 mm × 1.3 mm.",

keywords = "Optical modulation, Quadrature phase-shift keying, Semiconductor waveguides, Traveling wave devices",

author = "Nobuhiro Kikuchi and Yasuo Shibata and Ken Tsuzuki and Hiroaki Sanjoh and Tomonari Sato and Eiichi Yamada and Tadao Ishibashi and Hiroshi Yasaka",

year = "2009",

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T1 - 80-Gb/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure

AU - Kikuchi, Nobuhiro

AU - Shibata, Yasuo

AU - Tsuzuki, Ken

AU - Sanjoh, Hiroaki

AU - Sato, Tomonari

AU - Yamada, Eiichi

AU - Ishibashi, Tadao

AU - Yasaka, Hiroshi

PY - 2009/6/15

Y1 - 2009/6/15

N2 - We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 Vpp in a push-pull configuration. The chip size is just 7.5 mm × 1.3 mm.

AB - We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 Vpp in a push-pull configuration. The chip size is just 7.5 mm × 1.3 mm.

KW - Optical modulation

KW - Quadrature phase-shift keying

KW - Semiconductor waveguides

KW - Traveling wave devices

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80-Gb/s low-driving-voltage InP DQPSK modulator with an n-p-i-n structure

Abstract

Keywords

ASJC Scopus subject areas

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