80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

K. Sano; K. Murata; T. Otsuji; T. Akeyoshi; N. Shimizu; E. Sano

doi:10.1049/el:19990944

80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, E. Sano

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

An 80Gbit/s optoelectronic delayed flip-flop circuit which uses resonant tunnelling diodes and a uni-travelling-carrier photodiode is reported. The circuit design, which suppresses the effect of the AC current in the RTD pair, is the key to achieving such highspeed flip-flop operation. The monolithically fabricated circuit successfully operates at 80Gbit/s while consuming 7.68 mW, and is the fastest flip-flop circuit ever reported.

Original language	English
Pages (from-to)	1376-1377
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	16
DOIs	https://doi.org/10.1049/el:19990944
Publication status	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19990944

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abstract = "An 80Gbit/s optoelectronic delayed flip-flop circuit which uses resonant tunnelling diodes and a uni-travelling-carrier photodiode is reported. The circuit design, which suppresses the effect of the AC current in the RTD pair, is the key to achieving such highspeed flip-flop operation. The monolithically fabricated circuit successfully operates at 80Gbit/s while consuming 7.68 mW, and is the fastest flip-flop circuit ever reported.",

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AU - Sano, K.

AU - Murata, K.

AU - Otsuji, T.

AU - Akeyoshi, T.

AU - Shimizu, N.

AU - Sano, E.

PY - 1999

Y1 - 1999

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80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

Abstract

ASJC Scopus subject areas

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