A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

K. Washio; E. Ohue; H. Shimamoto; K. Oda; R. Hayami; Y. Kiyota; M. Tanabe; M. Kondo; T. Hashimoto; T. Harada

A 0.2-μm 180-GHz-f_max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, T. Harada

Research output: Contribution to journal › Conference article › peer-review

Abstract

A 0.2μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) with high quality passive elements was developed using SOI on a high resistivity substrate. The SiGe HBTs exhibit high frequency, high speed capability and a fast ECL-gate delay of 6.7 ps. Chemical mechanical polishing was done to planarize the W and inter insulators.

Original language	English
Pages (from-to)	741-744
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2000
Externally published	Yes
Event	2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 2000 Dec 10 → 2000 Dec 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications",

abstract = "A 0.2μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) with high quality passive elements was developed using SOI on a high resistivity substrate. The SiGe HBTs exhibit high frequency, high speed capability and a fast ECL-gate delay of 6.7 ps. Chemical mechanical polishing was done to planarize the W and inter insulators.",

author = "K. Washio and E. Ohue and H. Shimamoto and K. Oda and R. Hayami and Y. Kiyota and M. Tanabe and M. Kondo and T. Hashimoto and T. Harada",

year = "2000",

language = "English",

pages = "741--744",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

AU - Washio, K.

AU - Ohue, E.

AU - Shimamoto, H.

AU - Oda, K.

AU - Hayami, R.

AU - Kiyota, Y.

AU - Tanabe, M.

AU - Kondo, M.

AU - Hashimoto, T.

AU - Harada, T.

PY - 2000

Y1 - 2000

N2 - A 0.2μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) with high quality passive elements was developed using SOI on a high resistivity substrate. The SiGe HBTs exhibit high frequency, high speed capability and a fast ECL-gate delay of 6.7 ps. Chemical mechanical polishing was done to planarize the W and inter insulators.

AB - A 0.2μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT) with high quality passive elements was developed using SOI on a high resistivity substrate. The SiGe HBTs exhibit high frequency, high speed capability and a fast ECL-gate delay of 6.7 ps. Chemical mechanical polishing was done to planarize the W and inter insulators.

UR - http://www.scopus.com/inward/record.url?scp=0034453478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034453478&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034453478

SN - 0163-1918

SP - 741

EP - 744

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2000 IEEE International Electron Devices Meeting

Y2 - 10 December 2000 through 13 December 2000

ER -

A 0.2-μm 180-GHz-f_max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Abstract

ASJC Scopus subject areas

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