A 16-Mb toggle MRAM with burst modes

Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken Ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Norikazu Ohshima, Hiromitsu HadaNobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


This paper describes a recently developed 16-Mb toggle magnetic random access memory (MRAM). It has 100-MHz burst modes that are compatible with a pseudo-SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, we propose a distributed-driver wide-swing current-mirror scheme, an interleaved and pipelined memory-array group activation scheme, and a noise-insulation switch scheme. These circuit schemes compensate the toggle cell timing overhead in write modes and maintain write-current precision that is essential for the wide operational margin of MRAMs. Because toggle cells are very resistant to write disturbance errors, we designed the 16-Mb MRAM to include a toggle MRAM cell. The MRAM was fabricated with 0.13-μm CMOS and 0.24-μm MRAM processes with five metal layers.

Original languageEnglish
Article number4362112
Pages (from-to)2378-2385
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Issue number11
Publication statusPublished - 2007 Nov


  • Burst mode
  • Magnetic random access memory (MRAM)
  • Pseudo-SRAM
  • toggle cell


Dive into the research topics of 'A 16-Mb toggle MRAM with burst modes'. Together they form a unique fingerprint.

Cite this