A direct conversion Si-MMIC receiver, which consists of an on-chip matching LNA and a pair of even harmonic type SBD mixers including base band top amplifier, is developed. These circuits are integrated on high resistive Si substrates by using BiCMOS process. The receiver performs NF of 3.5 dB, conversion gain of 28.0 dB and IIP2 of -7 dBm with 3 V / 11.5 mA d.c. power and -3 dBm of local power. This results shows the feasibility to implement Si-MMIC direct converter for wireless handset use.
|Number of pages||5|
|Publication status||Published - 1998|
|Event||1998 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands|
Duration: 1998 Oct 5 → 1998 Oct 9
|Conference||1998 28th European Microwave Conference, EuMC 1998|
|Period||98/10/5 → 98/10/9|